Floating gate flash memory cell simulation

Abstract

Flash memory is widely used in computers, information and communication electronic systems as a modern non-volatile memory device that is capable to store data without connection to power supply. For the efficient design of the flash memory devices, an accurate simulation of the memory cells becomes increasingly important. In the present paper, a flash memory cell with the floating gate enveloped by the control gate is simulated using TCAD tools. The memory cell is simulated during programming and erasing operations. I-V and transient characteristics are obtained for various tunnel oxide thicknesses and operating voltages to demonstrate the efficiency of the cell design under consideration.