MODELING OF S-SHAPED ACCUMULATION PROCESS A- AND E-CENTERS IN ISOVALENT DOPED GERMANIUM SILICON IN STATISTICA AND MATHCAD ENVIRONMENT. Modern Problems of Metallurgy, [S. l.], n. 21, p. 29–35, 2019. DOI: 10.34185/1991-7848.2018.01.06. Disponível em: https://journals.nmetau.edu.ua/index.php/mpm/article/view/125.. Acesso em: 28 mar. 2026.